Park Kyeong-Beom, Kim Hyung-Jun, Kim Hyun-Mi, Han Sang A, Lee Kang Hyuck, Kim Sang-Woo, Kim Ki-Bum
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
SKKU Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Nanoscale. 2016 Mar 14;8(10):5755-63. doi: 10.1039/c5nr09085g.
We have fabricated highly sensitive and low noise solid-state nanopores with multiple layers of boron nitride (BN) membranes transferred onto a pyrex substrate. Both the dielectric and flicker noise of the device, which have been described as one of the bottlenecks to making highly sensitive 2-D membrane nanopore devices, have been reduced as follows. Firstly, a pyrex substrate with a low dielectric constant (εr = 4.7-5.1) and low dielectric loss (D < 0.001) is used instead of a Si substrate to reduce the dielectric noise of the device. Secondly, flicker noise is minimized by employing a 100 nm thick SiNx supporting layer with a small opening (less than 100 nm) for BN membrane transfer to enhance the mechanical stability. The flicker noise is further reduced by transferring multiple layers of BN instead of a single layer of BN. The resulting multi-layered BN device shows significant reduction of dielectric and 1/f noise as compared to the devices with a single layer of the BN and Si substrate. Furthermore, we demonstrate dsDNA translocations with a high signal to noise ratio around 50 at 100 and 10 kHz bandwidths.
我们已经制造出了高灵敏度、低噪声的固态纳米孔，其具有多层转移到派热克斯玻璃基板上的氮化硼（BN）膜。该器件的介电噪声和闪烁噪声，这两者已被描述为制造高灵敏度二维膜纳米孔器件的瓶颈之一，已按如下方式降低。首先，使用具有低介电常数（εr = 4.7 - 5.1）和低介电损耗（D < 0.001）的派热克斯玻璃基板代替硅基板，以降低器件的介电噪声。其次，通过采用具有用于转移BN膜的小开口（小于100 nm）的100 nm厚的SiNx支撑层来最小化闪烁噪声，以增强机械稳定性。通过转移多层BN而不是单层BN，闪烁噪声进一步降低。与具有单层BN和硅基板的器件相比，所得的多层BN器件显示出介电噪声和1/f噪声的显著降低。此外，我们展示了在100和10 kHz带宽下信噪比高达约50的双链DNA易位。
