Fluri Aline, Pergolesi Daniele, Roddatis Vladimir, Wokaun Alexander, Lippert Thomas
Department for Energy and Environment, Paul Scherrer Institut, 5232 Villigen-PSI, Switzerland.
Institut für Materialphysik, Universität Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany.
Nat Commun. 2016 Feb 25;7:10692. doi: 10.1038/ncomms10692.
Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.
通过施加应力改变晶格中的原子间距离，可以改变材料的许多特性。用于研究的理想模型系统是异质外延薄膜，其中晶格畸变可由与衬底的晶体学失配引起。在此，我们描述了一种在氧化物薄膜脉冲激光沉积过程中对生长模式和应力进行原位同步诊断的方法。通过光学晶圆曲率测量，在氧离子传导性Ce0.85Sm0.15O2-δ薄膜生长过程中监测应力状态及其直至弛豫开始的演变。拉伸应力的增加会降低电荷传输的活化能，通过对具有单晶导电特性的样品进行应力和形态的全面表征，可以量化这种效应。光学偏转测量和电子衍射的原位联合应用为材料科学中的应变工程提供了一种宝贵工具，以制造具有有趣功能的新型器件。
