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通过薄膜异质外延工程探测体离子电导率。

Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering.

作者信息

Pergolesi Daniele, Roddatis Vladimir, Fabbri Emiliana, Schneider Christof W, Lippert Thomas, Traversa Enrico, Kilner John A

机构信息

CIC Energigune, Albert Einstein 48, E-01510-Miñano (Álava), Spain.

Paul Scherrer Institut, Department of General Energy Research, CH-5225, Villigen-PSI, Switzerland.

出版信息

Sci Technol Adv Mater. 2015 Jan 13;16(1):015001. doi: 10.1088/1468-6996/16/1/015001. eCollection 2015 Feb.

DOI:10.1088/1468-6996/16/1/015001
PMID:27877751
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5036489/
Abstract

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO and SrTiO grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO and 8 mol% YO stabilized ZrO are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

摘要

具有小晶粒边界区域的高度织构化薄膜可作为模型系统,用于直接测量氧离子传导氧化物的体电导率。离子传导薄膜和外延异质结构也被广泛用于探究应变对氧化物材料中氧离子迁移的影响。为了这些研究目的,需要薄膜与衬底之间有良好的晶格匹配以促进薄膜的有序生长。此外,衬底在高温下应是良好的电绝缘体,以便对沉积薄膜进行可靠的电学表征。在此,我们报告了一种在MgO衬底上生长的由BaZrO和SrTiO双缓冲层构成的外延异质结构的制备,该结构满足了这两个要求。基于这样的模板平台,生长了15% Sm掺杂的CeO和8 mol% YO稳定的ZrO的高度有序(001)外延取向薄膜。测量了这两种材料的体电导率以及活化能,证实了该方法的成功。所报道的绝缘模板平台有望在其他仍需深入了解其离子电导率的新型电解质材料的电学表征方面有潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/b4163af0a8ee/TSTA1166124606.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/6540c5359d9c/TSTA1166124601.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/d5e00e871ffa/TSTA1166124602.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/e3da9bd29335/TSTA1166124603.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/5f3c4d342ed9/TSTA1166124604.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/f6fe9aee209e/TSTA1166124605.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/b4163af0a8ee/TSTA1166124606.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/6540c5359d9c/TSTA1166124601.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/d5e00e871ffa/TSTA1166124602.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/e3da9bd29335/TSTA1166124603.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/5f3c4d342ed9/TSTA1166124604.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/f6fe9aee209e/TSTA1166124605.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd6a/5036489/b4163af0a8ee/TSTA1166124606.jpg

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A family of oxide ion conductors based on the ferroelectric perovskite Na0.5Bi0.5TiO3.
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Nat Mater. 2014 Jan;13(1):31-5. doi: 10.1038/nmat3782. Epub 2013 Nov 10.
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The relevance of interfaces for oxide ion transport in yttria stabilized zirconia (YSZ) thin films.氧化钇稳定氧化锆(YSZ)薄膜中氧离子传输的界面相关性。
Phys Chem Chem Phys. 2013 Jan 28;15(4):1097-107. doi: 10.1039/c2cp42347b.
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