InSb 纳米线的光吸收效率测量。

Measurements of light absorption efficiency in InSb nanowires.

机构信息

Department of Physics, Lund University , P.O. Box 118, SE-221 00 Lund, Sweden.

MAX IV laboratory, Lund University , P.O. Box 118, Lund, Sweden.

出版信息

Struct Dyn. 2013 Dec 10;1(1):014502. doi: 10.1063/1.4833559. eCollection 2014 Jan.

DOI:10.1063/1.4833559

PMID:26913673

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4711595/

Abstract

We report on measurements of the light absorption efficiency of InSb nanowires. The absorbed 70 fs light pulse generates carriers, which equilibrate with the lattice via electron-phonon coupling. The increase in lattice temperature is manifested as a strain that can be measured with X-ray diffraction. The diffracted X-ray signal from the excited sample was measured using a streak camera. The amount of absorbed light was deduced by comparing X-ray diffraction measurements with simulations. It was found that 3.0(6)% of the radiation incident on the sample was absorbed by the nanowires, which cover 2.5% of the sample.

摘要

我们报告了对 InSb 纳米线光吸收效率的测量结果。被吸收的 70fs 光脉冲产生载流子，通过电子-声子耦合与晶格达到平衡。晶格温度的升高表现为应变，可以通过 X 射线衍射测量。使用条纹相机测量了激发样品的衍射 X 射线信号。通过将 X 射线衍射测量与模拟进行比较，推断出吸收的光量。结果发现，入射到样品上的辐射有 3.0%（6%）被覆盖了 2.5%的样品面积的纳米线吸收。