Solid State Physics and the Nanometer Structure Consortium, Lund University, PO Box 118 Lund, Sweden.
Nanotechnology. 2009 Dec 9;20(49):495606. doi: 10.1088/0957-4484/20/49/495606. Epub 2009 Nov 11.
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III-V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III-V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.
我们通过金属有机气相外延法展示了基于 InSb 的纳米线异质结构的生长，并利用它将 InSb 集成到由 InAs、InP 和 GaAs 制成的极其晶格失配的 III-V 纳米线模板上。为了研究生长速率和形态，我们研究了温度、V/III 比和直径的影响。由于前体分解的性质，用于 InSb 纳米线生长的生长温度范围与用于平面生长的温度范围非常相似。这使得生长参数的优化变得非常重要，而且比大多数其他纳米线 III-V 材料更困难。报告了在 InAs、InP 和 GaAs 上生长的 InSb 纳米线外延质量的分析，以及 InSb 段和颗粒成分。这种在具有前所未有的应变水平的纳米线模板上成功直接集成 InSb 纳米线，为制造垂直 InSb 器件带来了巨大的希望。
