Jamneala Tiberiu, Bradley Paul, Shirakawa Alexandre, Thalhammer Robert, Ruby Richard
IEEE Trans Ultrason Ferroelectr Freq Control. 2016 May;63(5):778-789. doi: 10.1109/TUFFC.2016.2531744. Epub 2016 Feb 24.
Using first principles and the constitutive equations for a piezoelectric, we solve the 2D acoustic wave inside a single, infinite, piezoelectric membrane in order to study the dispersion of Thin Film Bulk Acoustic Resonator (FBAR) lateral modes, with and without infinitely-thin electrodes. The acoustic eigenfunction is a dual wave, composed of longitudinal and shear components, able to satisfy the 2D acoustic boundary conditions at the vacuum interfaces. For the single piezoelectric slab we obtain analytical expressions of the dispersion for frequencies near the longitudinal resonant frequency (Fs) of the resonator. These expressions are more useful for the understanding of dispersion in FBARs and more elegant than numerical methods like Finite Element Modeling (FEM) and various matrix methods. We additionally find that the interaction between the resonator's electrodes and the acoustic wave modifies the lateral mode dispersion when compared to the case with no electrodes. When correctly accounting for these interactions the dispersion zero is placed clearly at Fs, unlike what is calculated from a 2D model without electrodes where the dispersion zero is placed at Fp. This is important since all experimental evidence of measures FBAR resonators shows that the dispersion zero is at Fs. Furthermore, we introduce an electrical current flow model for the propagating acoustic wave inside the electroded piezoelectric and based on this model we can discuss an electrode-loss mechanism for FBAR lateral modes which depends on dispersion. From our model it results that lateral modes with real kx have higher electrode dissipation if they are closer to the resonant frequency. This is consistent with the typical behavior of measured FBAR filters where the maximum lateral mode damage on the insertion loss takes place for frequencies immediately below Fs.
利用第一性原理和压电体的本构方程,我们求解了单个无限大压电薄膜内的二维声波,以研究有无无限薄电极情况下薄膜体声波谐振器(FBAR)横向模式的色散特性。声学本征函数是一种双波,由纵向和剪切分量组成,能够满足真空界面处的二维声学边界条件。对于单个压电平板,我们得到了谐振器纵向谐振频率(Fs)附近频率的色散解析表达式。这些表达式对于理解FBAR中的色散更为有用,并且比有限元建模(FEM)和各种矩阵方法等数值方法更为简洁。我们还发现,与无电极情况相比,谐振器电极与声波之间的相互作用会改变横向模式色散。当正确考虑这些相互作用时,色散零点清晰地位于Fs处,这与无电极的二维模型计算结果不同,后者的色散零点位于Fp处。这一点很重要,因为所有测量FBAR谐振器的实验证据都表明色散零点位于Fs处。此外,我们为有电极的压电体内传播的声波引入了电流流动模型,并基于此模型讨论了FBAR横向模式的电极损耗机制,该机制取决于色散。从我们的模型可以得出,实kx的横向模式如果更接近谐振频率,则具有更高的电极耗散。这与测量的FBAR滤波器的典型行为一致,即在插入损耗方面,最大的横向模式损耗发生在紧接Fs以下的频率处。