Zhao Bo, Cheng Peihong, Pan Haiyang, Zhang Shuai, Wang Baigeng, Wang Guanghou, Xiu Faxian, Song Fengqi
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing, 210093, P.R. China.
State Key Laboratory of Surface Physics and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, P.R. China.
Sci Rep. 2016 Mar 3;6:22377. doi: 10.1038/srep22377.
Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50 nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.
最近,理论上预测Cd3As2是一种三维狄拉克材料,这是继拓扑绝缘体之后发现的一种新的拓扑相,其体内具有无质量狄拉克费米子的线性能量色散。在此,我们报告了对约50纳米厚的Cd3As2薄膜进行的低温磁电阻测量。基于二维日高-拉金-长冈(HLN)理论讨论了垂直磁场下的弱反局域化。基于温度依赖的标度行为,将电子-电子相互作用视为退相的来源。由于这种准二维薄膜中不同电导通道之间的强相互作用,当磁场平行于电场时也能观察到弱反局域化。