Shen Wei-Chu, Chen Ruei-San, Huang Ying-Sheng
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
Nanoscale Res Lett. 2016 Dec;11(1):124. doi: 10.1186/s11671-016-1331-y. Epub 2016 Mar 2.
Photoconductivities in molybdenum disulfide (MoS2) layered nanostructures with two-hexagonal crystalline structure prepared by mechanical exfoliation were investigated. The photoconductor-type MoS2 nanoflakes exhibit remarkable photoresponse under the above bandgap excitation wavelength of 532 nm at different optical intensity. The photocurrent responsivity and photoconductive gain of nanoflakes can reach, respectively, 30 AW(-1) and 103 at the intensity of 50 Wm(-2), which are several orders of magnitude higher than those of their bulk counterparts. The vacuum-enhanced photocurrent and power-independent responsivity/gain indicate a surface-controlled photoconduction mechanism in the MoS2 nanomaterial.
研究了通过机械剥离制备的具有双六角晶体结构的二硫化钼（MoS₂）层状纳米结构中的光电导率。在532nm的上述带隙激发波长下，不同光强度下，光导体型MoS₂纳米片表现出显著的光响应。在50Wm⁻²的强度下，纳米片的光电流响应率和光电导增益分别可达30AW⁻¹和10³，比其块状对应物高出几个数量级。真空增强光电流和与功率无关的响应率/增益表明MoS₂纳米材料中存在表面控制的光电导机制。
