二硫化钨纳米结构中的光电导特性

Photoconduction Properties in Tungsten Disulfide Nanostructures.

作者信息

Bangolla Hemanth Kumar, Lee Yueh-Chien, Shen Wei-Chu, Ulaganathan Rajesh Kumar, Sankar Raman, Du He-Yun, Chen Ruei-San

机构信息

Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.

Department of Electronic Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan.

出版信息

Nanomaterials (Basel). 2023 Jul 27;13(15):2190. doi: 10.3390/nano13152190.

DOI:10.3390/nano13152190

PMID:37570508

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10421469/

Abstract

We reported the photoconduction properties of tungsten disulfide (WS) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400-4000 Wm). The WS photodetector exhibits superior performance with responsivity in the range of 36-73 AW and a normalized gain in the range of 3.5-7.3 10 cmV at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS nanostructures are of potential as a building block for novel optoelectronic device applications.

摘要

我们报道了通过机械剥离法获得的二硫化钨（WS）纳米片的光电导特性。使用具有不同照明功率的532nm激光源进行光电流测量。结果表明光电流与激发功率呈线性关系，并且在较高光强（400 - 4000 Wm）下光响应度表现出独立行为。WS光电探测器在1V的较低偏置电压下表现出优异的性能，响应度在36 - 73 AW范围内，归一化增益在3.5 - 7.3×10 cmV范围内。在不同光强下令人钦佩的光响应表明WS纳米结构作为新型光电器件应用的构建块具有潜力。