原子层状二维 MoTe₂/MoS₂ 范德华异质结构中的层间跃迁和红外光电探测
Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe₂/MoS₂ van der Waals Heterostructures.
机构信息
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China.
Hefei National Laboratory for Physical Sciences at the Microscale (HFNL) and Department of Physics, University of Science and Technology of China , Hefei, Anhui 230026, China.
出版信息
ACS Nano. 2016 Mar 22;10(3):3852-8. doi: 10.1021/acsnano.6b00980. Epub 2016 Mar 9.
We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.
我们展示了 MoTe2/MoS2 范德华（vdW）异质结构中的 II 型交错能带排列和约 1.55μm 的层间光学跃迁。光致电荷分离在 MoTe2/MoS2 vdW 异质结构之间通过光照下的 Kelvin 探针力显微镜 (KPFM)、密度泛函理论 (DFT) 模拟和光致发光 (PL) 光谱进行验证。MoTe2/MoS2 vdW 异质结构的光电测量显示在红外区域（1550nm）有明显的光电流响应。具有强层间耦合的 II 型 vdW 异质结构的产生可以提高我们对 vdW 异质结构背后基本物理的理解，并有助于设计下一代红外光电子学。
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