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用于高性能光电探测器的基于石墨炔的高效范德华异质结

Highly Efficient Van Der Waals Heterojunction on Graphdiyne toward the High-Performance Photodetector.

作者信息

Do Dinh Phuc, Hong Chengyun, Bui Viet Q, Pham Thi Hue, Seo Sohyeon, Do Van Dam, Phan Thanh Luan, Tran Kim My, Haldar Surajit, Ahn Byung-Wook, Lim Seong Chu, Yu Woo Jong, Kim Seong-Gon, Kim Ji-Hee, Lee Hyoyoung

机构信息

Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

出版信息

Adv Sci (Weinh). 2023 Sep;10(25):e2300925. doi: 10.1002/advs.202300925. Epub 2023 Jul 9.

Abstract

Graphdiyne (GDY), a new 2D material, has recently proven excellent performance in photodetector applications due to its direct bandgap and high mobility. Different from the zero-gap of graphene, these preeminent properties made GDY emerge as a rising star for solving the bottleneck of graphene-based inefficient heterojunction. Herein, a highly effective graphdiyne/molybdenum (GDY/MoS ) type-II heterojunction in a charge separation is reported toward a high-performance photodetector. Characterized by robust electron repulsion of alkyne-rich skeleton, the GDY based junction facilitates the effective electron-hole pairs separation and transfer. This results in significant suppression of Auger recombination up to six times at the GDY/MoS interface compared with the pristine materials owing to an ultrafast hot hole transfer from MoS to GDY. GDY/MoS device demonstrates notable photovoltaic behavior with a short-circuit current of -1.3 × 10 A and a large open-circuit voltage of 0.23 V under visible irradiation. As a positive-charge-attracting magnet, under illumination, alkyne-rich framework induces positive photogating effect on the neighboring MoS , further enhancing photocurrent. Consequently, the device exhibits broadband detection (453-1064 nm) with a maximum responsivity of 78.5 A W and a high speed of 50 µs. Results open up a new promising strategy using GDY toward effective junction for future optoelectronic applications.

摘要

石墨炔(GDY)是一种新型二维材料,由于其直接带隙和高迁移率,最近在光电探测器应用中表现出优异的性能。与石墨烯的零带隙不同,这些卓越的特性使石墨炔成为解决基于石墨烯的低效异质结瓶颈的一颗冉冉升起的新星。在此,报道了一种用于高性能光电探测器的电荷分离高效石墨炔/钼(GDY/MoS )II型异质结。基于富含炔烃骨架的强大电子排斥作用,基于GDY的结促进了有效的电子-空穴对分离和转移。由于超快的热空穴从MoS转移到GDY,与原始材料相比,这导致GDY/MoS界面处的俄歇复合显著抑制高达六倍。GDY/MoS器件在可见光照射下表现出显著的光伏行为,短路电流为-1.3×10 A,开路电压为0.23 V。作为一种吸引正电荷的磁体,在光照下,富含炔烃的框架对相邻的MoS产生正光电门效应,进一步增强光电流。因此,该器件表现出宽带检测(453-1064 nm),最大响应度为78.5 A W,速度高达50 µs。研究结果为未来光电子应用中使用GDY实现有效结开辟了一种新的有前景的策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e6a9/10477878/9be769007f79/ADVS-10-2300925-g001.jpg

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