Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong , Squires Way, North Wollongong, New South Wales 2500, Australia.
Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University , Shanghai 200444, People's Republic of China.
ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37446-37453. doi: 10.1021/acsami.7b11853. Epub 2017 Oct 11.
The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF) (100) substrates and glean the detailed information from the FeSe/CaF interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T/T as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF interfaces are also proposed for further enhancing the superconducting performance in this system.
对铁硒化物(FeSe)薄膜在各种衬底上界面的研究表明,该独特体系在高温超导方面具有巨大的潜力。在目前的工作中,我们在氟化钙(CaF)(100)衬底上获得了一系列不同厚度的 FeSe 薄膜,并通过扫描透射电子显微镜(STEM)从 FeSe/CaF 界面获得了详细信息。有趣的是,我们发现了普遍存在的钙硒化物(CaSe)层,其厚度约为 3nm,位于所有样品中的 FeSe 和 CaF 之间,与 FeSe 层的厚度无关。由于 CaSe 层的形成,FeSe 层中存在轻微的硒缺乏。除了超薄 FeSe 薄膜(厚度为 8nm)的情况外,这种硒缺乏通常可以忽略不计,因为其与 FeSe 的化学计量偏差足以抑制超导性。同时,在过厚的 FeSe 层(厚度为 160nm)中,发现了大量的沉淀物,并被认为是富铁相,这导致超导性能下降。因此,我们研究了 FeSe 薄膜超导转变温度(T)的厚度依赖性,我们的一种稳定大气的 FeSe 薄膜(厚度为 127nm)具有迄今为止记录的最高 T/T,为 15.1K/13.4K,在具有实际厚度的 FeSe 薄膜类别中。我们的结果通过高分辨率 STEM 为探索 FeSe 薄膜超导机制提供了新的视角。此外,还提出了一些可能改善 FeSe/CaF 界面质量的方法,以进一步提高该体系的超导性能。