揭示杂化 n-Si/PEDOT:PSS 界面。

Unveiling the Hybrid n-Si/PEDOT:PSS Interface.

机构信息

Institute of Nano-architectures for Energy Conversion, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner-Platz 1, 14109 Berlin, Germany.

Christiansen Research Group, Max-Planck-Institute for the Science of Light , Günther-Scharowsky-Straße 1, 91058 Erlangen, Germany.

出版信息

ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8841-8. doi: 10.1021/acsami.6b01596. Epub 2016 Mar 23.

DOI:10.1021/acsami.6b01596

PMID:26964648

Abstract

UNLABELLED

We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (

PEDOT

PSS), which is successfully applied as a hole selective contact in hybrid solar cells. We show that a post-treatment of the polymer films by immersion in a suitable solvent reduces the layer thickness by removal of excess material. We prove that this post-treatment does not affect the functionality of the hybrid solar cells. Through the thin layer we are probing the chemical structure at the n-Si/

PEDOT

PSS interface with synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). From the HAXPES data we conclude that the Si substrate of a freshly prepared hybrid solar cell is already oxidized immediately after preparation. Moreover, we show that even when storing the sample in inert gas such as, e.g., nitrogen the n-Si/SiOx/

PEDOT

PSS interface continues to further oxidize. Thus, without further surface treatment, an unstable Si suboxide will always be present at the hybrid interface.

摘要

未标记

我们研究了单晶 n 型硅（n-Si）和高导电性聚合物聚（3,4-乙撑二氧噻吩）-聚（苯乙烯磺酸盐）（PEDOT：PSS）之间的埋入界面，该界面成功地用作混合太阳能电池中的空穴选择接触。我们表明，通过将聚合物膜浸入适当的溶剂中进行后处理，可以通过去除多余的材料来减小层厚。我们证明这种后处理不会影响混合太阳能电池的功能。通过薄层，我们使用基于同步加速器的硬 X 光电子能谱（HAXPES）探测 n-Si/PEDOT：PSS 界面的化学结构。从 HAXPES 数据中我们得出结论，即使在制备后立即制备混合太阳能电池，新鲜制备的 Si 衬底也已经被氧化。此外，我们表明，即使将样品储存在惰性气体（例如氮气）中，n-Si/SiOx/PEDOT：PSS 界面也会继续进一步氧化。因此，如果不进行进一步的表面处理，在混合界面处总是会存在不稳定的 Si 亚氧化物。