Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University , 119 Academy Road Yeonsu, Incheon 406772, Republic of Korea.
Applied Device and Material Lab., Device Technology Division, Korea Advanced Nano Fab Center (KANC) , Suwon 443270, Republic of Korea.
ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8662-9. doi: 10.1021/acsami.5b12732. Epub 2016 Mar 23.
Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.
用于 Si 的肖特基结太阳能电池的热稳定银纳米线(AgNWs)嵌入金属氧化物,无需有意掺杂过程。大面积(100mm²)肖特基太阳能电池在标准照明下的功率转换效率为 6.1%,在漫射照明条件下的效率为 8.3%,这是 AgNWs 参与的肖特基结 Si 太阳能电池的最高效率。氧化铟锡(ITO)覆盖的 AgNWs 在 500°C 下表现出优异的热稳定性,没有变形。顶部 ITO 层沿 AgNWs 生长成圆柱形,形成泪滴形状。ITO/AgNWs/ITO 层的设计在光学上是有益的,因为 AgNWs 会产生等离子体光子,这是由于 AgNWs 的原因。通过 Mott-Schottky 和阻抗光谱进行了电研究,以揭示 Si 和嵌入 ITO 层的 AgNWs 之间界面处形成单一空间电荷区。我们提出了一种设计热稳定的 AgNWs 的方法,用于光电设备应用,并研究了其光学和电学方面。