Gu Peng, Zhu Xinghua, Yang Dingyu
College of Optoelectronic Technology, Chengdu University of Information Technology Chengdu 610225 People's Republic of China
College of Intelligent Manufacturing, Sichuan University of Arts and Science Dazhou 635002 People's Republic of China.
RSC Adv. 2019 Mar 11;9(14):8039-8047. doi: 10.1039/c9ra01099h. eCollection 2019 Mar 6.
Mn-doped ZnO (MZO) films were prepared on glass substrates using sol-gel dip-coating technology. The microstructural, morphological, optical and photoelectric properties of MZO films were investigated at different withdrawal speeds (WS: 20, 40, 60 and 80 mm s). The X-ray diffraction (XRD) patterns showed that all the films obtained were polycrystalline with a hexagonal structure, and the highest crystallinity of MZO films was observed as films were deposited at 40 mm s. The UV-Vis spectra revealed that the average optical transmittance of all samples was over 60% and the energy band gap of films decreased from 3.616 to 3.254 eV with the increase in withdrawal speed. The formed Au/MZO/Au photodetectors (PDs) indicate that a device prepared at 40 mm s shows superior properties both in response speed and detection capability, and the rise time is 1.871 s and fall time is 3.309 s at 365 nm for 3 V bias and the detectivity (*) reaches ∼1.7 × 10 Jones. Moreover, the responsivity of PDs is also affected by the distance between Au electrodes and external bias. This research provides a simple way to fabricate the UV PDs based on MZO films with faster response and higher detectivity.
采用溶胶-凝胶浸涂技术在玻璃衬底上制备了掺锰氧化锌(MZO)薄膜。研究了不同提拉速度(WS:20、40、60和80 mm/s)下MZO薄膜的微观结构、形态、光学和光电性能。X射线衍射(XRD)图谱表明,所制备的所有薄膜均为具有六方结构的多晶,当提拉速度为40 mm/s时沉积的MZO薄膜结晶度最高。紫外-可见光谱显示,所有样品的平均光学透过率均超过60%,且随着提拉速度的增加,薄膜的带隙从3.616 eV降至3.254 eV。所制备的金/ MZO /金光电探测器(PDs)表明,在40 mm/s提拉速度下制备的器件在响应速度和探测能力方面均表现出优异的性能,在3 V偏压下,365 nm处的上升时间为1.871 s,下降时间为3.309 s,探测率(*)达到~1.7×10琼斯。此外,光电探测器的响应度还受金电极之间距离和外部偏压的影响。本研究提供了一种基于MZO薄膜制备具有更快响应和更高探测率的紫外光电探测器的简单方法。