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电压驱动下环形纳米线中快速的磁畴壁运动。

Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage.

机构信息

Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States.

Department of Mechanical and Aerospace Engineering, University of California , Los Angeles, California 90095, United States.

出版信息

Nano Lett. 2016 Apr 13;16(4):2341-8. doi: 10.1021/acs.nanolett.5b05046. Epub 2016 Mar 28.

Abstract

Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.

摘要

由电压驱动的磁畴壁运动比由电流驱动的磁畴壁运动消耗的热量要少得多,但现有的研究报告都没有达到超过 100 m/s 的速度。在这里,我们结合相场和有限元模拟来研究在弯曲纳米线中应变介导的电压驱动磁畴壁运动的动力学。我们使用压电盘上的环形、粗糙边缘的磁性纳米线,展示了一种快速的电压驱动的磁畴壁运动,平均速度高达 550 m/s,与电流驱动的壁速度相当。我们推导出了一个解析理论来描述平均磁畴壁速度对应变的依赖性。此外,环形周围的一个 180°畴壁循环消耗的热量非常小,只有 0.2 fJ,大约比电流驱动的情况小 3 个数量级。这些发现为开发高速、低功耗的畴壁自旋电子学提供了一条新途径。

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