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薄膜异质结构中的低压磁电耦合

Low-voltage magnetoelectric coupling in membrane heterostructures.

作者信息

Lindemann Shane, Irwin Julian, Kim Gi-Yeop, Wang Bo, Eom Kitae, Wang Jianjun, Hu Jiamian, Chen Long-Qing, Choi Si-Young, Eom Chang-Beom, Rzchowski Mark S

机构信息

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.

Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA.

出版信息

Sci Adv. 2021 Nov 12;7(46):eabh2294. doi: 10.1126/sciadv.abh2294.

DOI:10.1126/sciadv.abh2294
PMID:34767439
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8589311/
Abstract

Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1 − )Pb(MgNb)O-()PbTiO (PMN-PT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films of PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate low-voltage ME coupling in an all-thin-film heterostructure that uses the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90° Ni magnetization rotation with 3 V PMN-PT bias, much less than the bulk PMN-PT ~100-V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step toward understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven ME heterostructures.

摘要

铁电（FE）/铁磁（FM）异质结构中的应变介导磁电（ME）耦合为基础科学研究和低功耗多功能器件提供了独特的机遇。弛豫铁电体，如（1 - ）Pb（MgNb）O - （）PbTiO（PMN - PT），因其巨大的压电性而成为理想的铁电层候选材料。然而，PMN - PT薄膜存在衬底夹持问题，这大大降低了压电平面内应变。在此，我们展示了一种全薄膜异质结构中的低电压ME耦合，该结构利用了PMN - PT（011）取向诱导的各向异性应变。我们将PMN - PT薄膜完全从其衬底上移除，并与FM镍覆盖层耦合，以创建膜状PMN - PT/Ni异质结构，该结构在3 V的PMN - PT偏压下显示出90°的镍磁化旋转，远低于块状PMN - PT约100 V的要求。扫描透射电子显微镜和相场模拟阐明了膜的响应。这些结果为理解用于压电驱动ME异质结构的PMN - PT薄膜的微观结构行为迈出了关键一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/71a6c4ab9d94/sciadv.abh2294-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/546000c07836/sciadv.abh2294-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/dad9f7b746da/sciadv.abh2294-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/5567bb48877d/sciadv.abh2294-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/4d930c65d743/sciadv.abh2294-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/71a6c4ab9d94/sciadv.abh2294-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/546000c07836/sciadv.abh2294-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/dad9f7b746da/sciadv.abh2294-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/5567bb48877d/sciadv.abh2294-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/4d930c65d743/sciadv.abh2294-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e695/8589311/71a6c4ab9d94/sciadv.abh2294-f5.jpg

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