Lin Hua, Liu Yi, Zhou Liu-Jiang, Zhao Hua-Jun, Chen Ling
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, People's Republic of China.
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, People's Republic of China.
Inorg Chem. 2016 May 2;55(9):4470-5. doi: 10.1021/acs.inorgchem.6b00254. Epub 2016 Apr 12.
Chalcogenides are the most promising mid- and far-infrared materials for nonlinear optical (NLO) applications. Yet, most of them are sulfides and selenides, and tellurides are still rare. Herein, we report three new KCd4Ga5S12-structure type NLO-active tellurides, CsX(II)4In5Te12 (X(II) = Mn, Zn, Cd), synthesized by solid-state reactions. The structure features a 3D diamond-like framework constructed by vertex-sharing asymmetric MTe4 tetrahedra that are stacked along the c-axis. CsCd4In5Te12 exhibits the strongest powder second-harmonic generation (SHG) intensity at 2050 nm (0.61 eV) among tellurides to date, 9 × benchmark AgGaS2 in the range of 46-74 μm particle size. The primary studies reveal the 1.42 eV direct band gap and high absorption coefficient in the visible spectral region for CsCd4In5Te12, suggesting it is a new potential solar cell absorber material. In addition, CsMn4In5Te12 also displays a spin-canted antiferromagnetic property below 50 K.
硫族化物是用于非线性光学（NLO）应用的最有前途的中红外和远红外材料。然而，它们大多是硫化物和硒化物，碲化物仍然很少见。在此，我们报道了通过固态反应合成的三种新型KCd4Ga5S12结构类型的NLO活性碲化物CsX(II)4In5Te12（X(II)=Mn、Zn、Cd）。该结构具有由沿c轴堆叠的顶点共享不对称MTe4四面体构成的三维类金刚石框架。CsCd4In5Te12在迄今为止的碲化物中，在2050nm（0.61eV）处表现出最强的粉末二次谐波产生（SHG）强度，在46-74μm粒径范围内是基准AgGaS2的9倍。初步研究表明，CsCd4In5Te12在可见光谱区域具有1.42eV的直接带隙和高吸收系数，表明它是一种新型潜在的太阳能电池吸收材料。此外，CsMn4In5Te12在50K以下还表现出自旋倾斜反铁磁特性。
