Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui, 230026, P.R. China.
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, P.R. China.
Angew Chem Int Ed Engl. 2016 Jun 1;55(23):6716-20. doi: 10.1002/anie.201602543. Epub 2016 Apr 21.
Limited by the relatively sluggish charge-carrier separation in semiconductors, the photocatalytic performance is still far below what is expected. Herein, a model of ZnIn2 S4 (ZIS) nanosheets with oxygen doping is put forward to obtain in-depth understanding of the role that doping atoms play in photocatalysis. It shows enhanced photocatalytic activity compared with pristine ZIS. The electron dynamics analyzed by ultrafast transient absorption spectroscopy reveals that the average recovery lifetime of photoexcited electrons is increased by 1.53 times upon oxygen incorporation into the ZIS crystals, indicating enhanced separation of photoexcited carriers in oxygen-doped ZIS nanosheets. As expected, the oxygen-doped ZIS nanosheets show a remarkably improved photocatalytic activity with a hydrogen evolution rate of up to 2120 μmol h(-1) g(-1) under visible-light irradiation, which is 4.5 times higher than that of the pristine ZIS nanosheets.
受半导体中载流子分离相对缓慢的限制，光催化性能仍远低于预期。在此，提出了一种具有氧掺杂的 ZnIn2 S4（ZIS）纳米片模型，以深入了解掺杂原子在光催化中的作用。与原始 ZIS 相比，它表现出增强的光催化活性。超快瞬态吸收光谱分析的电子动力学表明，氧掺入 ZIS 晶体后，光激发电子的平均恢复寿命增加了 1.53 倍，表明氧掺杂 ZIS 纳米片中光激发载流子的分离增强。正如预期的那样，氧掺杂 ZIS 纳米片在可见光照射下表现出显著提高的光催化活性，其析氢速率高达 2120 μmol h(-1) g(-1)，比原始 ZIS 纳米片高 4.5 倍。
