Zhang Xiaoyan, Tang Dan, Huang Kangrong, Hu Die, Zhang Fengyuan, Gao Xingsen, Lu Xubing, Zhou Guofu, Zhang Zhang, Liu Junming
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province, 510006, China.
Nanoscale Res Lett. 2016 Dec;11(1):225. doi: 10.1186/s11671-016-1369-x. Epub 2016 Apr 27.
In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.
在本报告中，展示了具有良好有序性和高密度（1.3×10¹⁰ cm⁻²）的垂直自支撑锆钛酸铅Pb(Zr₀.₅₂Ti₀.₄₈)O₃（PZT）纳米杯阵列。通过模板辅助离子束蚀刻（IBE）策略，在Pt/Si衬底上的通孔阳极氧化铝（AAO）膜中形成的PZT具有杯状纳米结构。PZT纳米杯（NCs）的平均直径和高度分别约为80和100 nm，NCs的壁厚约为20 nm，孔深约为80 nm。最重要的是，当失去模板的机械支撑时，具有低纵横比的纳米杯结构实现了垂直自支撑阵列，与典型的纳米管阵列相比，避免了坍塌或捆绑。X射线衍射（XRD）和拉曼光谱表明，所制备的PZT NCs为钙钛矿相。通过垂直压电响应力显微镜（VPFM）测量，垂直自支撑有序铁电PZT NCs显示出明确的环状压电响应相位和滞后回线，这表明高密度PZT纳米杯阵列在超高非易失性铁电存储器（NV-FRAM）或其他纳米电子器件中可能具有潜在应用。
