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探测单壁碳纳米管-C(60)异质结中的激子扩散与解离

Probing Exciton Diffusion and Dissociation in Single-Walled Carbon Nanotube-C(60) Heterojunctions.

作者信息

Dowgiallo Anne-Marie, Mistry Kevin S, Johnson Justin C, Reid Obadiah G, Blackburn Jeffrey L

机构信息

National Renewable Energy Laboratory , Golden, Colorado 80401, United States.

出版信息

J Phys Chem Lett. 2016 May 19;7(10):1794-9. doi: 10.1021/acs.jpclett.6b00604. Epub 2016 Apr 29.

Abstract

The efficiency of thin-film organic photovoltaic (OPV) devices relies heavily upon the transport of excitons to type-II heterojunction interfaces, where there is sufficient driving force for exciton dissociation and ultimately the formation of charge carriers. Semiconducting single-walled carbon nanotubes (SWCNTs) are strong near-infrared absorbers that form type-II heterojunctions with fullerenes such as C60. Although the efficiencies of SWCNT-fullerene OPV devices have climbed over the past few years, questions remain regarding the fundamental factors that currently limit their performance. In this study, we determine the exciton diffusion length in the C60 layer of SWCNT-C60 bilayer active layers using femtosecond transient absorption measurements. We demonstrate that hole transfer from photoexcited C60 molecules to SWCNTs can be tracked by the growth of narrow spectroscopic signatures of holes in the SWCNT "reporter layer". In bilayers with thick C60 layers, the SWCNT charge-related signatures display a slow rise over hundreds of picoseconds, reflecting exciton diffusion through the C60 layer to the interface. A model based on exciton diffusion with a Beer-Lambert excitation profile, as well as Monte Carlo simulations, gives the best fit to the data as a function of C60 layer thickness using an exciton diffusion length of approximately 5 nm.

摘要

薄膜有机光伏(OPV)器件的效率在很大程度上依赖于激子向II型异质结界面的传输,在该界面存在足够的驱动力促使激子解离并最终形成电荷载流子。半导体单壁碳纳米管(SWCNT)是强近红外吸收体,能与诸如C60的富勒烯形成II型异质结。尽管SWCNT-富勒烯OPV器件的效率在过去几年有所提高,但目前限制其性能的基本因素仍存在疑问。在本研究中,我们使用飞秒瞬态吸收测量来确定SWCNT-C60双层活性层C60层中的激子扩散长度。我们证明,从光激发的C60分子到SWCNT的空穴转移可以通过SWCNT“报告层”中空穴窄光谱特征的增长来追踪。在具有厚C60层的双层中,与SWCNT电荷相关的特征在数百皮秒内显示出缓慢上升,这反映了激子通过C60层扩散到界面。基于具有比尔-朗伯激发分布的激子扩散模型以及蒙特卡罗模拟,使用约5nm的激子扩散长度,能对作为C60层厚度函数的数据给出最佳拟合。

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