Hong Seokjun, Lee Minjae, Cheon Hongjin, Kim Taehyun, Cho Dong-Il Dan
ISRC/ASRI, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Korea.
Quantum Tech. Lab., SK Telecom, Seongnam-si, Gyeonggi-do 463-784, Korea.
Sensors (Basel). 2016 Apr 28;16(5):616. doi: 10.3390/s16050616.
Ion traps can provide both physical implementation of quantum information processing and direct observation of quantum systems. Recently, surface ion traps have been developed using microfabrication technologies and are considered to be a promising platform for scalable quantum devices. This paper presents detailed guidelines for designing the electrodes of surface ion traps. First, we define and explain the key specifications including trap depth, q-parameter, secular frequency, and ion height. Then, we present a numerical-simulation-based design procedure, which involves determining the basic assumptions, determining the shape and size of the chip, designing the dimensions of the radio frequency (RF) electrode, and analyzing the direct current (DC) control voltages. As an example of this design procedure, we present a case study with tutorial-like explanations. The proposed design procedure can provide a practical guideline for designing the electrodes of surface ion traps.
离子阱既能提供量子信息处理的物理实现,又能对量子系统进行直接观测。近年来,利用微纳加工技术开发出了表面离子阱,被认为是用于可扩展量子器件的一个很有前景的平台。本文给出了设计表面离子阱电极的详细指南。首先,我们定义并解释了关键参数,包括阱深、q参数、本征频率和离子高度。然后,我们提出了一种基于数值模拟的设计流程,包括确定基本假设、确定芯片的形状和尺寸、设计射频(RF)电极的尺寸以及分析直流(DC)控制电压。作为该设计流程的一个例子,我们给出了一个带有教程式解释的案例研究。所提出的设计流程可为设计表面离子阱电极提供实用指南。