Eckhardt Sebastian, Siebold Mathias, Lasagni Andrés Fabián
Opt Express. 2016 Mar 21;24(6):A553-68. doi: 10.1364/OE.24.00A553.
In the search for alternative materials to replace indium-tin-oxide in transparent electrodes we have structured copper and aluminum thin films (between 5 an 40 nm) for tailoring their optical properties. Micrometer scaled holes were produced using the direct laser interference patterning (DLIP) technique. We compared the optical and electrical parameters of nanosecond and picosecond processed thin films. It was found that the optical transmittance of the structured layers was relatively increased between 25 to 125% while the electrical resistance was marginally influenced. In addition, the laser treatment enhanced the diffuse to total transmission ratio (HAZE) by values ranging from 30 to 82% (relative) as a potential advantage of μm structuring. The results also show that both of the studied metals succeed to match the target which is set by typical applications of indium thin oxide (ITO) films. Furthermore, numerical simulations are performed in order to understand the ablation process of thin film material for ps and ns pulses.
在寻找替代材料以取代透明电极中的铟锡氧化物时,我们对铜和铝薄膜(5至40纳米)进行了结构化处理,以调整其光学性能。使用直接激光干涉图案化(DLIP)技术制作了微米级的孔洞。我们比较了纳秒和皮秒处理薄膜的光学和电学参数。结果发现,结构化层的光学透过率相对提高了25%至125%,而电阻受到的影响较小。此外,作为微米结构化的潜在优势,激光处理使漫反射与总透射率(雾度)提高了30%至82%(相对)。结果还表明,所研究的两种金属均成功达到了铟锡氧化物(ITO)薄膜典型应用所设定的目标。此外,还进行了数值模拟,以了解皮秒和纳秒脉冲下薄膜材料的烧蚀过程。