Tan Xiao-Hui, Chen Yu, Liu Ye-Xiang
Appl Opt. 2014 May 20;53(15):3273-7. doi: 10.1364/AO.53.003273.
Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased.
通过溶液法制备的银纳米线-氧化铟锡纳米颗粒（AgNW-ITONP）复合薄膜成功用作具有ZnS缓冲层的Cu(In,Ga)Se₂（CIGS）薄膜太阳能电池的透明电极。研究了AgNW-ITONP薄膜的性能及其对CIGS/ZnS薄膜太阳能电池性能的影响。与传统溅射ITO电极相比，AgNW-ITONP薄膜具有相当的光学透过率和电导率。此外，AgNW-ITONP薄膜不会对相邻表面层造成物理损伤，也无需高温退火，这使其非常适合用作对热或溅射损伤敏感的光电器件的透明导电层。通过使用AgNW-ITONP电极，CIGS薄膜太阳能电池所需的ZnS缓冲层厚度大大降低。
