IBM Almaden Research Center, San Jose, CA, 95120, USA.
Max Planck Institute for Microstructure Physics, 06120, Halle, Germany.
Adv Mater. 2016 Jul;28(26):5284-92. doi: 10.1002/adma.201505631. Epub 2016 May 9.
Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.
离子液体门控可使能带和莫特绝缘体发生可逆的金属化，同时伴随着显著的结构变化。在 WO3 的外延薄膜中发现室温下电导率发生了七个数量级的变化，同时伴随着单斜相到立方相的结构重排。氧离子沿开放体积通道的迁移是其内在机制。
