Suppr超能文献

具有垂直离子传输通道的单晶T-NbO薄膜中的锂离子电子学

Li iontronics in single-crystalline T-NbO thin films with vertical ionic transport channels.

作者信息

Han Hyeon, Jacquet Quentin, Jiang Zhen, Sayed Farheen N, Jeon Jae-Chun, Sharma Arpit, Schankler Aaron M, Kakekhani Arvin, Meyerheim Holger L, Park Jucheol, Nam Sang Yeol, Griffith Kent J, Simonelli Laura, Rappe Andrew M, Grey Clare P, Parkin Stuart S P

机构信息

Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.

Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK.

出版信息

Nat Mater. 2023 Sep;22(9):1128-1135. doi: 10.1038/s41563-023-01612-2. Epub 2023 Jul 27.

Abstract

The niobium oxide polymorph T-NbO has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure, which has two-dimensional (2D) layers with very low steric hindrance, allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, probably due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-NbO thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration, which we show gives rise to a colossal insulator-metal transition, where the resistivity drops by 11 orders of magnitude due to the population of the initially empty Nb 4d states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, which allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way for the exploration of novel thin films with ionic channels and their potential applications.

摘要

氧化铌多晶型物T-NbO已被广泛研究其块状形式,特别是在快速充电电池和电化学(伪)电容器中的应用。其晶体结构具有二维(2D)层,空间位阻非常低,允许锂离子快速迁移。然而,自1941年发现以来,单晶薄膜的生长及其电子应用尚未实现,这可能是由于其较大的正交晶胞以及存在许多多晶型物。在这里,我们展示了单晶T-NbO薄膜的外延生长,关键是离子传输通道垂直于薄膜表面取向。这些垂直的二维通道实现了锂离子的快速迁移,我们表明这会导致巨大的绝缘体-金属转变,由于电子填充了最初空的Nb 4d态,电阻率下降了11个数量级。此外,通过全面的原位实验和理论计算,我们揭示了在广泛的锂离子浓度范围内具有不同晶体和电子结构的多个未探索的相变,这允许对这些相及其独特的电子性质进行可逆和可重复的操纵。这项工作为探索具有离子通道的新型薄膜及其潜在应用铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/730e/10465368/31e6350be8eb/41563_2023_1612_Fig1_HTML.jpg

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验