CdTe和CdSe自组装量子点中各种激子复合物的磁光特性比较。

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots.

作者信息

Kobak J, Smoleński T, Goryca M, Rousset J-G, Pacuski W, Bogucki A, Oreszczuk K, Kossacki P, Nawrocki M, Golnik A, Płachta J, Wojnar P, Kruse C, Hommel D, Potemski M, Kazimierczuk T

机构信息

Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.

出版信息

J Phys Condens Matter. 2016 Jul 6;28(26):265302. doi: 10.1088/0953-8984/28/26/265302. Epub 2016 May 13.

DOI:10.1088/0953-8984/28/26/265302

PMID:27173643

Abstract

We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X(+), X(-)) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting δ1=0.14 meV (δ1=0.47 meV); g-factor g = 2.12 (g = 1.71); diamagnetic shift γ=2.5 μeV T(-2) (γ =1.3 μeV T(-2)). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

摘要

我们展示了基于II-VI化合物的两种自组装量子点（QD）系统的比较研究：CdTe/ZnTe和CdSe/ZnSe。使用磁光技术，我们研究了大量的单个量子点。对与中性激子X、双激子XX和单电荷激子（X(+)、X(-)）复合相关的发射线进行的系统光致发光研究，使我们能够确定描述CdTe量子点（CdSe量子点）的平均参数：X - XX跃迁能量差12毫电子伏特（24毫电子伏特）；精细结构分裂δ1 = 0.14毫电子伏特（δ1 = 0.47毫电子伏特）；g因子g = 2.12（g = 1.71）；抗磁位移γ = 2.5微电子伏特T^(-2)（γ = 1.3微电子伏特T^(-2)）。我们还发现描述激子复合物内部结构的各种参数之间存在统计学上显著的相关性。