使用电荷存储交联核壳纳米颗粒的非易失性晶体管存储器件。
Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.
作者信息
Lo Chen-Tsyr, Watanabe Yu, Oya Hiroshi, Nakabayashi Kazuhiro, Mori Hideharu, Chen Wen-Chang
机构信息
Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan.
出版信息
Chem Commun (Camb). 2016 Jun 7;52(45):7269-72. doi: 10.1039/c6cc02750d. Epub 2016 May 16.
PMID:27180874
Abstract
Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.
摘要
溶液可加工的交联核壳聚[聚（乙二醇）甲基醚甲基丙烯酸酯]-嵌段-聚（2,5-二溴-3-乙烯基噻吩）（聚（PEGMA）m-嵌段-聚（DB3VT）n）纳米颗粒由于其在电荷转移和俘获方面的高效且可控的能力，首次被探索用作晶体管型存储器件的电荷存储材料。
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