通过平行真空紫外光实现高分辨率电子器件的自发图案化。

Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet.

机构信息

World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan.

Colloidal Ink. Co., Ltd, Sojya-shi, Okayama, 719-1121, Japan.

出版信息

Adv Mater. 2016 Aug;28(31):6568-73. doi: 10.1002/adma.201506151. Epub 2016 May 17.

DOI:10.1002/adma.201506151

PMID:27184834

Abstract

A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 μm resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm(2) V(-1) s(-1) in the devices with channel lengths of 1 and 5 μm, respectively.

摘要

一种通过平行真空紫外光实现的自发图案化技术被开发出来，用于制造具有 1μm 分辨率的大规模、复杂电子电路。所制备的有机薄膜晶体管在沟道长度分别为 1μm 和 5μm 的器件中具有 1.5kΩcm 的低接触电阻和 0.3 和 1.5cm2V-1s-1的高迁移率。