Kim Hyekyoung, Reddy M Rajeshkumar, Kim Hyungsug, Choi Donghee, Kim Choongik, Seo SungYong
Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea.
Department of Chemistry, Pukyong National University, Busan, 48513, Republic of Korea.
Chempluschem. 2017 May;82(5):742-749. doi: 10.1002/cplu.201700070. Epub 2017 Apr 24.
New benzothiadiazole derivatives, 4,7-bis(5-phenylthiophen-2-yl)benzo[c][1,2,5]thiadiazole (PT-BTD) and 4,7-bis[4-(thiophen-2-yl)phenyl]benzo[c][1,2,5]thiadiazole (TP-BTD), were synthesized and characterized as small-molecule organic semiconductors for organic thin-film transistors (OTFTs) and complementary inverters. The thermal, optical, and electrochemical properties of the new compounds were fully characterized. Vacuum-deposition and solution-shearing methods were used to fabricate thin films based on these compounds. Thin films based on PT-BTD exhibited p-channel characteristics with hole mobilities as high as 0.10 cm V s and current on/off ratios >10 for top-contact/bottom-gate OTFT devices. With an optimized blending ratio of PT-BTD and the representative n-channel semiconductor N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide, bulk heterojunction ambipolar transistors were fabricated with balanced hole and electron mobilities of 0.10 and 0.07 cm V s , respectively. Furthermore, a complementary-like inverter was fabricated using ambipolar thin-film transistors, which showed a high voltage gain of 84.
合成了新型苯并噻二唑衍生物4,7-双(5-苯基噻吩-2-基)苯并[c][1,2,5]噻二唑(PT-BTD)和4,7-双[4-(噻吩-2-基)苯基]苯并[c][1,2,5]噻二唑(TP-BTD)，并将其表征为用于有机薄膜晶体管(OTFT)和互补逆变器的小分子有机半导体。对新化合物的热、光和电化学性质进行了全面表征。采用真空沉积和溶液剪切法制备了基于这些化合物的薄膜。基于PT-BTD的薄膜在顶接触/底栅OTFT器件中表现出p沟道特性，空穴迁移率高达0.10 cm² V⁻¹ s⁻¹，电流开/关比>10。通过优化PT-BTD与代表性n沟道半导体N,N'-1H,1H-全氟丁基二氰基苝二酰亚胺的混合比例，制备了具有平衡空穴和电子迁移率的体异质结双极性晶体管，分别为0.10和0.07 cm² V⁻¹ s⁻¹。此外，使用双极性薄膜晶体管制造了类互补逆变器，其显示出84的高电压增益。
