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有机肖特基势垒太阳能电池的界面工程及其在提高平面异质结太阳能电池性能中的应用。

Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells.

作者信息

Jin Fangming, Su Zisheng, Chu Bei, Cheng Pengfei, Wang Junbo, Zhao Haifeng, Gao Yuan, Yan Xingwu, Li Wenlian

机构信息

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China.

School of Aerospace Science and Technology, Xidian University, Xi'an 710126, P.R. China.

出版信息

Sci Rep. 2016 May 17;6:26262. doi: 10.1038/srep26262.

Abstract

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm(2), an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm(2). Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.

摘要

在本工作中,我们描述了具有ITO/氧化钼(MoOx)/亚酞菁硼(SubPc)/二氮杂菲(BPhen)/铝结构的有机肖特基势垒太阳能电池的性能。基于SubPc的肖特基势垒太阳能电池在100 mW/cm²的模拟AM1.5 G太阳光照下,短路电流密度(Jsc)为2.59 mA/cm²,开路电压(Voc)为1.06 V,功率转换效率(PCE)为0.82%。通过简单地在MoOx和SubPc的界面插入薄的有机空穴传输材料,器件性能得到了显著提高。优化后的器件实现了2.30%的PCE增长180%,并观察到高达1.45 V的峰值Voc。我们发现这种改进归因于中间层的激子和电子阻挡效应,并且其厚度在平衡电荷分离和抑制猝灭效应中起着至关重要的作用。此外,将这种界面工程应用于基于MoOx/SubPc/C60的平面异质结电池,使器件的PCE从3.48%大幅提高了44%,达到5.03%。最后,我们还研究了用于肖特基势垒修饰的界面材料的要求。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/722b/4869098/481dd0b8f6c3/srep26262-f1.jpg

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