基于热光电子效应的超快响应 p-Si/n-ZnO 异质结紫外探测器。

Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect.

机构信息

Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing, 100875, China.

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.

出版信息

Adv Mater. 2016 Aug;28(32):6880-6. doi: 10.1002/adma.201600884. Epub 2016 May 24.

DOI:10.1002/adma.201600884

PMID:27219114

Abstract

A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.

摘要

提出了一种在纤锌矿 ZnO 纳米线中光自诱导热光电效应，作为实现 p-Si/n-ZnO 异质结构中超快紫外响应的有效方法。基于氧化锌的紫外传感器在空气/真空中的响应/恢复时间较长，长期以来一直是开发此类探测器用于实际应用的障碍。热光电效应大大提高了响应/恢复时间和光响应率。