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基于氧化锌纳米材料的紫外光探测器研究进展:检测机制及其改进综述

Progress in UV Photodetectors Based on ZnO Nanomaterials: A Review of the Detection Mechanisms and Their Improvement.

作者信息

Li Gaoda, Cheng Bolang, Zhang Haibo, Zhu Xinghua, Yang Dingyu

机构信息

College of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China.

School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China.

出版信息

Nanomaterials (Basel). 2025 Apr 24;15(9):644. doi: 10.3390/nano15090644.

Abstract

Recent advancements in ultraviolet (UV) photodetection technology have driven intensive research on zinc oxide (ZnO) nanomaterials due to their exceptional optoelectronic properties. This review systematically examines the fundamental detection mechanisms in ZnO-based UV photodetectors (UVPDs), including photoconductivity effects, the threshold dimension phenomenon and light-modulated interface barriers. Based on these mechanisms, a large surface barrier due to surface-adsorbed O is generally constructed to achieve a high sensitivity. However, this improvement is obtained with a decrease in response speed due to the slow desorption and re-adsorption processes of surface O during UV light detection. Various improvement strategies have been proposed to overcome this drawback and keep the high sensitivity, including ZnO-organic semiconductor interfacing, defect engineering and doping, surface modification, heterojunction and the Schottky barrier. The general idea is to modify the adsorption state of O or replace the adsorbed O with another material to build a light-regulated surface or an interface barrier, as surveyed in the third section. The critical trade-off between sensitivity and response speed is also addressed. Finally, after a summary of these mechanisms and the improvement methods, this review is concluded with an outlook on the future development of ZnO nanomaterial UVPDs.

摘要

由于其优异的光电特性,紫外线(UV)光电探测技术的最新进展推动了对氧化锌(ZnO)纳米材料的深入研究。本综述系统地研究了基于ZnO的紫外光电探测器(UVPD)中的基本探测机制,包括光电导效应、阈值尺寸现象和光调制界面势垒。基于这些机制,通常构建一个由表面吸附的O引起的大表面势垒以实现高灵敏度。然而,由于在紫外光检测过程中表面O的缓慢解吸和再吸附过程,这种改进是以响应速度的降低为代价获得的。已经提出了各种改进策略来克服这一缺点并保持高灵敏度,包括ZnO-有机半导体界面、缺陷工程与掺杂、表面改性、异质结和肖特基势垒。总体思路是改变O的吸附状态或用另一种材料替代吸附的O,以构建光调节表面或界面势垒,如第三节所述。还讨论了灵敏度和响应速度之间的关键权衡。最后,在总结这些机制和改进方法之后,本综述以对ZnO纳米材料UVPD未来发展的展望作为结论。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b810/12074481/1e3c7e611a8d/nanomaterials-15-00644-g001.jpg

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