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Ba1-xKxFe2As2 超导体中临界温度和临界电流密度对掺杂的独特依赖性。

Distinct doping dependence of critical temperature and critical current density in Ba1-xKxFe2As2 superconductor.

作者信息

Song Dongjoon, Ishida Shigeyuki, Iyo Akira, Nakajima Masamichi, Shimoyama Jun-Ichi, Eisterer Michael, Eisaki Hiroshi

机构信息

Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan.

Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan.

出版信息

Sci Rep. 2016 May 25;6:26671. doi: 10.1038/srep26671.

DOI:10.1038/srep26671
PMID:27220461
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4879573/
Abstract

Since the high transition temperature (High-Tc) superconductivity was discovered in the series of materials containing iron (Fe), their potential for the applications has been extensively scrutinized. In particular, a lot of effort has been made in achieving the high current-carrying ability by revealing the vortex pinning behavior. Here, we report on the critical current density (Jc) for the pristine Ba1-xKxFe2As2 single crystals with various K concentrations (0.25 ≤ x ≤ 0.52) determined by the magnetization hysteresis loop measurements. The x-dependence of Jc is characterized by a spike-like peak at x ~ 0.30, which corresponds to the under-doped region. This behavior is distinct from a moderate Tc dome with a broad maximum spanning from x ~ 0.3 to 0.5. For the under-doped samples, with increasing magnetic field (H), a second magnetization peak in Jc is observed, whereas for the optimally- and over-doped samples, Jc monotonically decreases with H. This result emphasizes that fine tuning of doping composition is important to obtain strong flux pinning. The origin of the characteristic doping dependence of Jc is discussed in connection with the orthorhombic phase domain boundary, as well as the chemical inhomogeneity introduced by the dopant substitutions.

摘要

自从在含铁(Fe)的一系列材料中发现高温超导性以来,它们的应用潜力受到了广泛审视。特别是,通过揭示涡旋钉扎行为,人们在实现高载流能力方面付出了很多努力。在此,我们报告了通过磁化磁滞回线测量确定的不同K浓度(0.25≤x≤0.52)的原始Ba1-xKxFe2As2单晶的临界电流密度(Jc)。Jc的x依赖性表现为在x≈0.30处有一个尖峰状峰值,这对应于欠掺杂区域。这种行为与Tc适度的圆顶状区域不同,后者的最大值范围较宽,从x≈0.3到0.5。对于欠掺杂样品,随着磁场(H)增加,在Jc中观察到第二个峰值,而对于最佳掺杂和过掺杂样品,Jc随H单调下降。这一结果强调了精确调整掺杂成分对于获得强磁通钉扎的重要性。结合正交相畴边界以及掺杂剂替代引入的化学不均匀性,讨论了Jc特征掺杂依赖性的起源。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/8163fc3e2612/srep26671-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/9030bfff20c0/srep26671-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/f1659a67850d/srep26671-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/8163fc3e2612/srep26671-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/9030bfff20c0/srep26671-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/f1659a67850d/srep26671-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6361/4879573/8163fc3e2612/srep26671-f3.jpg

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本文引用的文献

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