Sinhamahapatra Apurba, Jeon Jong-Pil, Kang Joonhee, Han Byungchan, Yu Jong-Sung
Department of Energy Systems Engineering, DGIST, Daegu, 42988, Republic of Korea.
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Sci Rep. 2016 Jun 6;6:27218. doi: 10.1038/srep27218.
Here, we present oxygen-deficient black ZrO2-x as a new material for sunlight absorption with a low band gap around 1.5 eV, via a controlled magnesiothermic reduction in 5% H2/Ar from white ZrO2, a wide bandgap(5 eV) semiconductor, usually not considered for solar light absorption. It shows for the first time a dramatic increase in solar light absorbance and significant activity for solar light-induced H2 production from methanol-water with excellent stability up to 30 days while white ZrO2 fails. Generation of large amounts of oxygen vacancies or surface defects clearly visualized by the HR-TEM and HR-SEM images is the main reason for the drastic alteration of the optical properties through the formation of new energy states near valence band and conduction band towards Fermi level in black ZrO2-x as indicated by XPS and DFT calculations of black ZrO2-x. Current reduction method using Mg and H2 is mild, but highly efficient to produce solar light-assisted photocatalytically active black ZrO2-x.
在此,我们通过在5% H₂/Ar气氛中对白ZrO₂(一种宽带隙(约5 eV)半导体,通常不被认为可用于太阳光吸收)进行可控的镁热还原,制备出了缺氧黑色ZrO₂₋ₓ,这是一种新型的太阳光吸收材料,其带隙约为1.5 eV。首次发现,在甲醇 - 水体系中,黑色ZrO₂₋ₓ对太阳光的吸光度显著增加,且具有显著的太阳光诱导产氢活性,稳定性极佳,长达30天,而白色ZrO₂则无此效果。高分辨透射电子显微镜(HR - TEM)和高分辨扫描电子显微镜(HR - SEM)图像清晰显示出大量氧空位或表面缺陷的产生,这是黑色ZrO₂₋ₓ光学性质发生剧烈变化的主要原因,正如X射线光电子能谱(XPS)和黑色ZrO₂₋ₓ的密度泛函理论(DFT)计算所示,这些氧空位或表面缺陷在价带和导带附近形成了新的靠近费米能级的能态。目前使用Mg和H₂的还原方法较为温和,但能高效制备出具有太阳光辅助光催化活性的黑色ZrO₂₋ₓ。