Department of Instrumentation and Applied Physics, Indian Institute of Science , Bangalore, Karnataka, India 560012.
ACS Appl Mater Interfaces. 2016 Jul 20;8(28):18182-8. doi: 10.1021/acsami.6b04954. Epub 2016 Jul 8.
Light absorption efficiency and doping induced charge carrier density play a vital role in self-powered optoelectronic devices. Unique vanadium-doped zinc oxide nanoflake array (VZnO NFs) is fabricated for self-powered ultraviolet (UV) photodetection. The light harvesting efficiency drastically improved from 84% in ZnO NRs to 98% in VZnO NFs. Moreover, the hydrogenation of as-synthesized VZnO (H:VZnO) NFs displayed an outstanding increase in response current as compared to pristine structures. The H:VZnO NFs device presents an extraordinary photoelastic behavior with faster photodetection speed in the order of ms under a low UV illumination signal. Excellent responsivity and external quantum efficiency with larger value of specific detectivity of H:VZnO NFs device promises an outstanding sensitivity for UV signal and self-powered high-performance visible-blind photodetector.
光吸收效率和掺杂诱导的电荷载流子密度在自供电光电设备中起着至关重要的作用。独特的钒掺杂氧化锌纳米片阵列（VZnO NFs）被制备用于自供电紫外（UV）光电探测器。与 ZnO NRs 中的 84%相比，光收集效率大幅提高到 VZnO NFs 中的 98%。此外，与原始结构相比，所合成的 VZnO（H:VZnO）NFs 的氢化显示出响应电流的显著增加。与原始结构相比，H:VZnO NFs 器件在低 UV 照明信号下以毫秒级的速度表现出非凡的光弹行为，具有更快的光电检测速度。H:VZnO NFs 器件具有优异的响应率和外量子效率，以及更大的比探测率值，为 UV 信号和自供电高性能可见光盲光电探测器提供了出色的灵敏度。
