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比表面积:拓扑绝缘体 Bi2Se3 纳米线热电器件输运中的关键参数。

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi2Se3 nanowires.

机构信息

Institute of Nanostructure and Solid State Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany.

Institute of Metallic Materials, Leibniz Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden, Germany.

出版信息

Nanoscale. 2016 Jul 14;8(28):13552-7. doi: 10.1039/c6nr01716a.

Abstract

We systematically investigated the role of topological surface states on thermoelectric transport by varying the surface-to-volume ratio (s/v) of Bi2Se3 nanowires. The thermoelectric coefficients of Bi2Se3 nanowires were significantly influenced by the topological surface states with increasing the s/v. The Seebeck coefficient of Bi2Se3 nanowires decreased with increasing the s/v, while the electrical conductivity increased with increasing the s/v. This implies that the influence of metallic surface states become dominant in thermoelectric transport in thin nanowires, and the s/v is a key parameter which determines the total thermoelectric properties. Our measurements were corroborated by using a two-channel Boltzmann transport model.

摘要

我们通过改变 Bi2Se3 纳米线的表面积与体积比(s/v),系统地研究了拓扑表面态对热电器件的影响。随着 s/v 的增加,Bi2Se3 纳米线的热电系数受到拓扑表面态的显著影响。Bi2Se3 纳米线的塞贝克系数随着 s/v 的增加而减小,而电导率随着 s/v 的增加而增加。这意味着在薄纳米线的热电器件中,金属表面态的影响占据主导地位,而 s/v 是决定总热电性能的关键参数。我们的测量结果通过使用双通道玻尔兹曼输运模型得到了验证。

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