Grillanda Stefano, Singh Vivek, Raghunathan Vivek, Morichetti Francesco, Melloni Andrea, Kimerling Lionel, Agarwal Anuradha M
Opt Lett. 2016 Jul 1;41(13):3053-6. doi: 10.1364/OL.41.003053.
To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.
为支持集成光子学在诸如外层空间等恶劣环境中的应用,必须确定其对高能辐射的硬度阈值。在此,我们研究了能量在兆电子伏特范围内的伽马(γ)射线对硅光子波导的影响。通过对高品质因数非晶硅芯谐振器进行辐照,我们测量了γ射线对我们波导系统中所包含材料的影响,即非晶硅、二氧化硅和聚合物。虽然我们展示了非晶硅和二氧化硅在吸收剂量高达15兆拉德时的稳健性,这比之前关于晶体硅的报告高出100多倍,但聚合物材料在吸收剂量低至1兆拉德时就会出现变化。