Boynton Nicholas, Gehl Michael, Dallo Christina, Pomerene Andrew, Starbuck Andrew, Hood Dana, Dodd Paul, Swanson Scot, Trotter Douglas, DeRose Christopher, Lentine Anthony
Opt Express. 2020 Nov 9;28(23):35192-35201. doi: 10.1364/OE.401299.
Passive silicon photonic waveguides are exposed to gamma radiation to understand how the performance of silicon photonic integrated circuits is affected in harsh environments such as space or high energy physics experiments. The propagation loss and group index of the mode guided by these waveguides is characterized by implementing a phase sensitive swept-wavelength interferometric method. We find that the propagation loss associated with each waveguide geometry explored in this study slightly increases at absorbed doses of up to 100 krad (Si). The measured change in group index associated with the same waveguide geometries is negligibly changed after exposure. Additionally, we show that the post-exposure degradation of these waveguides can be improved through heat treatment.
将无源硅光子波导暴露于伽马辐射下，以了解在诸如太空或高能物理实验等恶劣环境中硅光子集成电路的性能是如何受到影响的。通过实施一种相位敏感扫频波长干涉测量方法，对这些波导所引导模式的传播损耗和群折射率进行了表征。我们发现，在本研究中探索的每种波导几何结构相关的传播损耗，在吸收剂量高达100千拉德（硅）时会略有增加。与相同波导几何结构相关的群折射率在暴露后的测量变化可忽略不计。此外，我们表明，通过热处理可以改善这些波导暴露后的退化情况。
