Department of Material Science, National Tsing-Hua University , Hsinchu 20013, Taiwan.
Birck Nanotechnology Center, School of Computer and Electrical Engineering, Purdue University , West Lafayette, Indiana 47907, United States.
Nano Lett. 2016 Aug 10;16(8):4940-5. doi: 10.1021/acs.nanolett.6b01558. Epub 2016 Jul 21.
The low quantum yield observed in two-dimensional semiconductors of transition metal dichalcogenides (TMDs) has motivated the quest for approaches that can enhance the light emission from these systems. Here, we demonstrate broadband enhancement of spontaneous emission and increase in Raman signature from archetype two-dimensional semiconductors: molybdenum disulfide (MoS2) and tungsten disulfide (WS2) by placing the monolayers in the near field of a photonic hypercrystal having hyperbolic dispersion. Hypercrystals are characterized by a large broadband photonic density of states due to hyperbolic dispersion while having enhanced light in/out coupling by a subwavelength photonic crystal lattice. This dual advantage is exploited here to enhance the light emission from the 2D TMDs and can be utilized for developing light emitters and solar cells using two-dimensional semiconductors.
二维过渡金属二硫属化物(TMDs)半导体中观察到的低量子产率促使人们寻求能够增强这些体系光发射的方法。在这里,我们通过将单层置于具有双曲色散的光子超晶格的近场中,证明了原型二维半导体:二硫化钼(MoS2)和二硫化钨(WS2)的自发发射的宽带增强和喇曼特征的增加。超晶体的特点是由于双曲色散而具有大的宽带光子态密度,同时通过亚波长光子晶体格子增强了光的输入/输出耦合。这里利用这双重优势来增强二维 TMD 的光发射,并可用于开发使用二维半导体的发光器件和太阳能电池。