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用于异质结太阳能电池应用的非晶硅MIS基结构的电学特性

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

作者信息

García Héctor, Castán Helena, Dueñas Salvador, Bailón Luis, García-Hernansanz Rodrigo, Olea Javier, Del Prado Álvaro, Mártil Ignacio

机构信息

Department of Electronics, University of Valladolid, Paseo Belén, 15, 47011, Valladolid, Spain.

Dpto. Física Aplicada III, Universidad Complutense de Madrid, CEI Campus Moncloa, UCM-UPM, Madrid, Spain.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):335. doi: 10.1186/s11671-016-1545-z. Epub 2016 Jul 16.

DOI:10.1186/s11671-016-1545-z
PMID:27423876
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4947466/
Abstract

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

摘要

通过电子回旋共振化学气相沉积（ECR-CVD）在晶体硅（c-Si）衬底上沉积的氢化非晶硅层（a-Si:H）进行了完整的电学特性表征。这些结构在光伏应用中具有重要意义。使用了30至200°C之间的不同生长温度。在金属化过程之后，在200°C的形成气体气氛中进行10分钟的快速热退火。界面态密度随沉积温度的变化表明，在较高的生长温度下界面钝化效果更好。然而，在这些情况下，也检测到了慢态的重要贡献。因此，使用中间生长温度（100-150°C）可能是最佳选择。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/755e54dfa42f/11671_2016_1545_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/0d97dc102c96/11671_2016_1545_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/8efa87a82cc1/11671_2016_1545_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/a264198bc934/11671_2016_1545_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/cfbd84f41332/11671_2016_1545_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/169689d63911/11671_2016_1545_Fig5_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/e13786c5d0ee/11671_2016_1545_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/4daa61c547c0/11671_2016_1545_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/374fba111ee8/11671_2016_1545_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/755e54dfa42f/11671_2016_1545_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/0d97dc102c96/11671_2016_1545_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/8efa87a82cc1/11671_2016_1545_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/a264198bc934/11671_2016_1545_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/cfbd84f41332/11671_2016_1545_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/169689d63911/11671_2016_1545_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/f1b4088f4763/11671_2016_1545_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/e13786c5d0ee/11671_2016_1545_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/4daa61c547c0/11671_2016_1545_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/374fba111ee8/11671_2016_1545_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/626d/4947466/755e54dfa42f/11671_2016_1545_Fig10_HTML.jpg

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