Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l'Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia.
Nanoscale Res Lett. 2012 Aug 17;7(1):464. doi: 10.1186/1556-276X-7-464.
Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.
多孔硅层通过对重掺杂的 p 型硅衬底进行电化学腐蚀来制备。多孔硅的金属化是通过将衬底浸入稀释的镍水溶液中来完成的。非晶硅薄膜通过等离子体增强化学气相沉积在金属化的多孔层上沉积。沉积的非晶硅薄膜在 750°C 的真空中结晶。结构、光学和电学特性的结果表明，在 Ni 金属化多孔硅上沉积的非晶硅的热退火导致硅薄膜的结晶质量和物理性能得到提高。薄膜质量的提高是由于退火过程中非晶硅薄膜的结晶。这种简单易用的方法可用于生产高质量的硅薄膜，适用于薄膜太阳能电池应用。
