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采用小角中子散射分析对聚(乙烯-共-四氟乙烯)接枝聚(乙烯基苄基氯)[ETFE-g-PVBC]薄膜进行形态学研究。

Morphological Study of Poly(vinylbenzyl chloride)-Grafted Poly(ethylene-co-tetrafluoroethylene) [ETFE-g-PVBC] Films Using Small-Angle Neutron Scattering Analysis.

作者信息

Song J M, Ko B S, Sohn J Y, Shin J

出版信息

J Nanosci Nanotechnol. 2016 Jun;16(6):6313-7. doi: 10.1166/jnn.2016.12139.

DOI:10.1166/jnn.2016.12139
PMID:27427709
Abstract

In this study, the effect of degree of the grafting and crosslinking on the morphology of the crystalline domain in poly(vinylbenzyl chloride)-grafted poly(ethylene-co-tetrafluoroethylene) [ETFE-g-PVBC] films was investigated using a SANS (small-angle neutron scattering) analysis. The grafted films can be used as a precursor for ion-exchange membrane. ETFE-g-PVBC films with various degrees of cross-linking were prepared by a simultaneous irradiation grafting of vinylbenzyl chloride (VBC) and divinylbenzene (DVB) onto an ETFE film. The SEM-EDX (scanning electron microscopy-energy dispersive X-ray spectroscopy) results of a cross-sectional distribution of ETFE-g-PVBC films showed that the chlorine atoms were well-distributed throughout the films. SANS profiles of the PVBC-grafted films in the absence of a DVB crosslinker showed that the crystalline domain peaks were observed and the peak maximum position shifted significantly from 0.032 Å-(-1) to 0.02 Å(-1) with an increase in the degree of grafting. However, peak maximum positions of the PVBC-grafted films in the presence of a DVB crosslinker shifted slightly from 0.02 Å(-1) to 0.024 Å(-1) with an increase in the amount of DVB monomer at same degree of grafting. These results indicate that the degree of grafting and crosslinking affect the morphology of the crystalline domain in the ETFE-g-PVBC films.

摘要

在本研究中,使用小角中子散射(SANS)分析研究了接枝和交联程度对聚(乙烯 - 共 - 四氟乙烯)接枝聚(乙烯基苄基氯)[ETFE - g - PVBC]薄膜中晶区形态的影响。接枝薄膜可作为离子交换膜的前驱体。通过将乙烯基苄基氯(VBC)和二乙烯基苯(DVB)同时辐照接枝到ETFE薄膜上,制备了具有不同交联程度的ETFE - g - PVBC薄膜。ETFE - g - PVBC薄膜横截面分布的扫描电子显微镜 - 能量色散X射线光谱(SEM - EDX)结果表明,氯原子在整个薄膜中分布良好。在没有DVB交联剂的情况下,PVBC接枝薄膜的SANS图谱显示观察到了晶区峰,并且随着接枝程度的增加,峰的最大位置从0.032 Å⁻¹显著移动到0.02 Å⁻¹。然而,在相同接枝程度下,随着DVB单体用量的增加,存在DVB交联剂时PVBC接枝薄膜的峰最大位置从0.02 Å⁻¹略微移动到0.024 Å⁻¹。这些结果表明接枝和交联程度会影响ETFE - g - PVBC薄膜中晶区的形态。

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