Grytsyuk Sergiy, Belabbes Abderrezak, Haney Paul M, Lee Hyun-Woo, Lee Kyung-Jin, Stiles M D, Schwingenschögl Udo, Manchon Aurelien
Physical Science and Engineering Division, KAUST, 23955-6900 Thuwal, Kingdom of Saudi Arabia.
Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6202, USA.
Phys Rev B. 2016 May 1;93(17). doi: 10.1103/PhysRevB.93.174421. Epub 2016 May 23.
We systematically investigate the spin-orbit coupling-induced band splitting originating from inversion symmetry breaking at the interface between a Co monolayer and 4 (Tc, Ru, Rh, Pd, and Ag) or 5 (Re, Os, Ir, Pt, and Au) transition metals. In spite of the complex band structure of these systems, the odd-in- spin splitting of the bands displays striking similarities with the much simpler Rashba spin-orbit coupling picture. While we do not find salient correlations between the interfacial magnetic anisotropy and the odd-in- spin-splitting of the bands, we establish a clear connection between the overall strength of the band splitting and the charge transfer between the -orbitals at the interface. Furthermore, we show that the spin splitting of the Fermi surface scales with the induced orbital moment, weighted by the spin-orbit coupling.
我们系统地研究了钴单层与4种(Tc、Ru、Rh、Pd和Ag)或5种(Re、Os、Ir、Pt和Au)过渡金属界面处因反演对称性破缺而产生的自旋轨道耦合诱导能带分裂。尽管这些体系的能带结构复杂,但能带的奇数自旋分裂与简单得多的Rashba自旋轨道耦合情况有着显著的相似性。虽然我们没有发现界面磁各向异性与能带的奇数自旋分裂之间存在显著关联,但我们建立了能带分裂的整体强度与界面处轨道间电荷转移之间的明确联系。此外,我们表明费米面的自旋分裂与诱导轨道矩成比例,由自旋轨道耦合加权。