Martínez-Rivera Freddyson J, Rodriguez-Romaguera Jose, Lloret-Torres Mario E, Do Monte Fabricio H, Quirk Gregory J, Barreto-Estrada Jennifer L
Department of Anatomy and Neurobiology, San Juan, Puerto Rico.
Department of Psychiatry, School of Medicine, Medical Sciences Campus, University of Puerto Rico, San Juan, Puerto Rico.
Biol Psychiatry. 2016 Nov 1;80(9):682-690. doi: 10.1016/j.biopsych.2016.05.015. Epub 2016 May 27.
Recent research in humans and rodents has explored the use of deep brain stimulation (DBS) of the ventral capsule/ventral striatum (VS) as a possible treatment for drug addiction. However, the optimum electrode placement and optimum DBS parameters have not been thoroughly studied. Here we varied stimulation sites and frequencies to determine whether DBS of the VS could facilitate the extinction of morphine-induced conditioned place preference in rats.
Rats were implanted with DBS electrodes in the dorsal or ventral subregions of the VS and trained to the morphine conditioned place preference. Subsequently, rats received extinction sessions over 9 days, combined with 60 min of either high- (130 Hz) or low- (20 Hz) frequency DBS. To study circuit-wide activations after DBS of the VS, c-fos immunohistochemistry was performed in regions involved in the extinction of drug-seeking behaviors.
High-frequency DBS of the dorsal-VS impaired both extinction training and extinction memory, whereas high-frequency DBS of the ventral-VS had no effect. In contrast, low-frequency DBS of the dorsal-VS strengthened extinction memory when tested 2 or 9 days after the cessation of stimulation. Both DBS frequencies increased c-fos expression in the infralimbic prefrontal cortex, but only low-frequency DBS increased c-fos expression in the basal amygdala and the medial portion of the central amygdala.
Our results suggest that low-frequency (rather than high-frequency) DBS of the dorsal-VS strengthens extinction memory and may be a potential adjunct for extinction-based therapies for treatment-refractory opioid addiction.
近期针对人类和啮齿动物的研究探讨了使用腹侧囊/腹侧纹状体(VS)的深部脑刺激(DBS)作为治疗药物成瘾的一种可能方法。然而,最佳电极放置位置和最佳DBS参数尚未得到充分研究。在此,我们改变刺激部位和频率,以确定VS的DBS是否能促进大鼠吗啡诱导的条件性位置偏爱消退。
将DBS电极植入大鼠VS的背侧或腹侧亚区,并训练其形成吗啡条件性位置偏爱。随后,大鼠接受为期9天的消退训练,同时结合60分钟的高频(130Hz)或低频(20Hz)DBS。为研究VS的DBS后全脑回路激活情况,在参与药物寻求行为消退的区域进行c-fos免疫组织化学检测。
背侧VS的高频DBS损害了消退训练和消退记忆,而腹侧VS的高频DBS则无此影响。相比之下,背侧VS的低频DBS在刺激停止后2天或9天进行测试时增强了消退记忆。两种DBS频率均增加了边缘下前额叶皮质中的c-fos表达,但只有低频DBS增加了基底杏仁核和中央杏仁核内侧部分的c-fos表达。
我们的结果表明,背侧VS的低频(而非高频)DBS增强了消退记忆,可能是治疗难治性阿片类药物成瘾基于消退疗法的一种潜在辅助手段。