Shibao Hideto, Nakahara Yoshio, Uno Kazuyuki, Tanaka Ichiro
J Nanosci Nanotechnol. 2016 Apr;16(4):3327-31. doi: 10.1166/jnn.2016.12292.
Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.
研究了含3-甲基丙烯酰氧基丙基的聚倍半硅氧烷（PSQ）作为用于并五苯薄膜晶体管（TFT）的紫外（UV）光固化栅极介电材料。UV光固化PSQ薄膜的表面比热固化薄膜的表面更光滑，并且沉积在UV光固化PSQ薄膜上的并五苯层由更大的晶粒组成。然而，使用UV光固化PSQ薄膜的TFT的载流子迁移率低于使用热固化薄膜的TFT的载流子迁移率。结果表明，仅添加到UV光固化PSQ薄膜中的交联剂分子是TFT迁移率的主要限制因素。
