Matsuda Yu, Nakahara Yoshio, Michiura Daisuke, Uno Kazuyuki, Tanaka Ichiro
J Nanosci Nanotechnol. 2016 Apr;16(4):3273-6. doi: 10.1166/jnn.2016.12293.
Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.
聚倍半硅氧烷（PSQ）是一种可低温固化的聚合物，与低成本塑料基板兼容。我们在约60°C下通过紫外线照射固化PSQ栅极介电层，并将其用于6,13-双（三异丙基硅乙炔基）并五苯（TIPS-并五苯）薄膜晶体管（TFT）。所制备的TFT的最大空穴迁移率和平均空穴迁移率分别为1.3和0.78±0.3 cm2V-1s-1，这与先前报道的使用单晶TIPS-并五苯微带作为有源层、热氧化SiO2作为栅极介电层的晶体管相当。因此证明PSQ是用于低成本有机TFT的一种有前景的聚合物栅极介电材料。
