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弗洛凯拓扑绝缘体中的非常规量子霍尔效应。

Unconventional quantum Hall effect in Floquet topological insulators.

作者信息

Tahir M, Vasilopoulos P, Schwingenschlögl U

机构信息

Department of Physics, Concordia University, Montreal, QC H3G 1M8, Canada.

出版信息

J Phys Condens Matter. 2016 Sep 28;28(38):385302. doi: 10.1088/0953-8984/28/38/385302. Epub 2016 Jul 27.

Abstract

We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity [Formula: see text] at zero Fermi energy, to a Hall insulator state with [Formula: see text]. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at [Formula: see text].

摘要

我们研究了垂直磁场中超薄弗洛凯拓扑绝缘体表面态的非常规量子霍尔效应。光子修饰改变了所得的能带结构,拓扑性质由单个表面的低能动力学决定。通过反转光的偏振,对称和反对称表面态会发生交换。我们发现了一种新型量子霍尔态,其中零朗道能级经历了从平凡绝缘体态(在零费米能时霍尔电导率为[公式:见原文])到霍尔绝缘体态(霍尔电导率为[公式:见原文])的相变。这些发现为在[公式:见原文]下通过实验实现非平凡量子态和异常量子霍尔平台开辟了新的可能性。

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