Harrer A, Schwarz B, Schuler S, Reininger P, Wirthmüller A, Detz H, MacFarland D, Zederbauer T, Andrews A M, Rothermund M, Oppermann H, Schrenk W, Strasser G
Opt Express. 2016 Jul 25;24(15):17041-9. doi: 10.1364/OE.24.017041.
We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D of 5⋅10 cmHz/W was measured.
我们展示了一款工作在4.3μm波长的量子级联探测器的设计模拟与特性。研究了阵列集成和封装工艺。该器件在4.3μm的CO吸收区域工作，由64个像素组成。该探测器设计为与标准处理和材料生长方法完全兼容，以便可扩展到大量像素。探测器设计针对高温下的高器件电阻进行了优化。增强了一个量子级联探测器模拟模型以优化电阻和响应度。衬底照明像素利用二维金衍射光栅将光耦合到有源区。在室温下测量到单个像素的响应度为16mA/W，比探测率D为5⋅10 cmHz/W。
