School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, UK.
Nanoscale. 2016 Sep 28;8(36):16157-61. doi: 10.1039/c6nr03269a. Epub 2016 Jul 28.
The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor-acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of defect-state-mediated photoluminescence for these particles, and identifying them as an ideal model system for future study of lattice defects on Qdot properties.
铜铟硫 (CIS) 量子点 (Qdots) 的光致发光的起源先前归因于施主-受主对 (DAP) 复合，其中晶格缺陷被认为是施主态的起源。在这项研究中，电子能量损失谱 (EELS) 用于观察单个 CIS Qdots 内富缺陷的组成域，支持了这些粒子的缺陷态介导光致发光模型，并将其鉴定为未来晶格缺陷对 Qdot 性质研究的理想模型系统。
